Semiconductors & Electronic Materials
Showing 81–96 of 199 results
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – AlGaAs/GaAs Epitaxial Materials
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – InGaAlP/GaAs Epitaxial System
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Atomfair 635nm~2005nm GaAs Laser Epitaxial Wafers – IGaInAs/GaAs Material System
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Atomfair 635nm~2006nm GaAs Laser Epitaxial Wafers – Quantum Well Epitaxy
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Atomfair 6H P-Type Silicon Carbide Substrate
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Atomfair AlGaAs/GaAs HBT Epitaxial Wafer
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Atomfair Aluminum (Al) Single Crystal Substrate
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Atomfair Aluminum Antimonide (AlSb)
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Atomfair Butyl Sealant
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Atomfair Cadmium Sulfide (CdS) Crystal Substrate
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Atomfair Cadmium Telluride (CdTe) Crystal Substrate
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Atomfair Cleaning Agent
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 12″ 775um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish DSP
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Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP