Description
High-Purity Zinc Oxide Substrates for GaN Epitaxial Growth
High-purity zinc oxide substrates for GaN epitaxial growth with 2.2% lattice mismatch at <0001> orientation. Available in standard size of 20×20×0.5mm with hexagonal crystal structure.
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Property
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Value
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Structure
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Hexahedron a=3.325Å c=5.213Å
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Density
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5.605
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Thermal expansivity
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2.90
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Lattice mismatch rate with GaN
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2.2% at <0001> orientation
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Standard size
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20×20×0.5mm
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Growth method
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Hydrothermal
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Transmission wavelength
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0.4-0.6μm
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Refractive index
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no=1.922, ne=1.936
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
