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Atomfair Silicon Carbide (SiC) Substrate
High-quality silicon carbide substrates for GaN epitaxial growth with 3.5% lattice mismatch at orientation. Available in standard size of 4″??0.5mm with hexagonal crystal structure.
Description
High-quality silicon carbide substrates for GaN epitaxial growth with 3.5% lattice mismatch at <0001> orientation. Available in standard size of 4″??0.5mm with hexagonal crystal structure.
| Property | Value |
|---|---|
| Structure | Hexahedron a=3.080A c=15.12A |
| Density | 3.217 |
| Thermal expansivity | 10.3 |
| Lattice mismatch rate with GaN | 3.5% at <0001> orientation |
| Standard size | 4″??0.5mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
