Description
High-Quality Silicon Carbide Substrates for GaN Epitaxial Growth
High-quality silicon carbide substrates for GaN epitaxial growth with 3.5% lattice mismatch at <0001> orientation. Available in standard size of 4″×0.5mm with hexagonal crystal structure.
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Property
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Value
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Structure
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Hexahedron a=3.080Å c=15.12Å
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Density
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3.217
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Thermal expansivity
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10.3
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Lattice mismatch rate with GaN
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3.5% at <0001> orientation
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Standard size
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4″×0.5mm
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If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
