Description
A 6H-SiC single crystal substrate with P-type doping, designed for high-frequency power devices and high-temperature applications. It offers robust thermal and electrical properties. Ideal for optoelectronic and high-power device manufacturing.
| Property | Value |
|---|---|
| Lattice Parameters | a=3.09A, c=15.084A |
| Stacking Sequence | ACBABC |
| Mohs Hardness | ≈9.2 |
| Density | 3.0g/cm³ |
| Thermal Expansion Coefficient | 4.3×10⁻⁶/K(⊥Caxis), 4.7×10⁻⁶/K(Caxis) |
| Refraction Index @750nm | no=2.612, ne=2.651 |
| Dielectric Constant | c~9.66 |
| Thermal Conductivity | 3-5W/cm·K@298K |
| Band-Gap | 3.02eV |
| Break-Down Electrical Field | 2-5×10⁶V/cm |
| Saturation Drift Velocity | 2.0×10⁵m/s |
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Disclaimer: Sold exclusively for laboratory research.
