As a third-generation semiconductor material, gallium nitride (GaN) features superior bandgap (far higher than silicon and silicon carbide), thermal conductivity, electron mobility, and on-resistance. Due to high N dissociation pressure during GaN growth at high temperatures, large-sized GaN single crystals are hard to obtain-thus, preparing epitaxial GaN films on heterogeneous substrates becomes the main method for GaN material and device research. Common growth methods include HVPE, MBE, and MOCVD. Most commercial devices are based on GaN heteroepitaxy, with SiC, Si, and Sapphire as primary substrates.
| Specifications | |
|---|---|
| Substrate Material | Silicon Carbide (SiC) |
| Diameter | 6 inch |
| Lattice Mismatch | 3.50% |
| Thermal Expansion Difference | 25% |
| Defect Density | 5×108/cm2 |
| Leakage Current | High |
| Integration Potential | Medium |
Larger diameter wafers for high-power RF applications with superior thermal management capabilities.
