GaSb (Gallium Antimonide) is a III-V group semiconductor compound composed of gallium and antimony, with a lattice constant of approximately 0.61nm. Boasting excellent electrical, optical, and thermal properties, it’s ideal for infrared detectors, infrared LEDs, lasers, transistors, and thermophotovoltaic systems, showing great potential in high quantum efficiency and high-frequency devices. It also enables superlattices with customized optical/transmission properties and serves as a booster cell in tandem solar arrangements to enhance the efficiency of photovoltaic and high-performance TPV cells. We offer 2”, 3”, and 7” GaSb single crystal wafers.
| Property | Value |
|---|---|
| Material | Zn-doped GaSb |
| Diameter | 50.8±0.3mm |
| Thickness | 500±25μm |
| Conductivity Type | P-type |
| Carrier Concentration | (5-100)×1017 cm-3 |
| Mobility | 200-500 cm2/V·s |
| Dislocation Density | <2×103 cm-2 |
| Orientation | (100) |
| Surface | Single/Double side polished |
