Description
| Property | Value |
|---|---|
| Material | Te-doped InSb |
| Diameter | 50.8±0.3mm |
| Thickness | 500±25μm |
| Conductivity Type | N-type |
| Carrier Concentration | 1×1017-1×1018 cm-3 |
| Dislocation Density | <2×102 cm-2 |
| Bandgap (300K) | 0.17 eV |
| Electron Mobility (RT) | 78,000 cm2/V·s |
Atomfair 2″ Te-doped InSb Single Crystal Wafer Te-doped InSb50.8±0.3mm500±25μm N-type 1×1017-1×1018 cm-3<2x102 cm-2 0.17 eV 78,000 cm2/V.s
Indium Antimonide (InSb) is a crystalline compound of indium (In) and antimony (Sb), boasting stable physicochemical properties and excellent process compatibility. As a III-V narrow-bandgap semiconductor, it’s ideal for infrared detectors-used in thermal imagers, FLIR systems, infrared-guided missile systems, and infrared astronomy-with sensitivity to 1-5μm wavelengths. It was widely applied in legacy single-detector mechanical scanning thermal imaging systems and also serves as a terahertz radiation source (a strong photo-Dember emitter). Available in 2 3 4 sizes.
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