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Atomfair 2″ Fe-doped InP Single Crystal Wafer Fe-doped InP 50mm±0.25mm Semi-insulating (0.6-5)x1016 cm-3 >1×107Ωcm <3x104cm-2 (100) 350±25μm SSP/DSP

Institutional Procurement & Supply Compliance: As a verified US supplier, Atomfair accepts formal institutional Purchase Orders (POs), contract billing schedules, and custom procurement loops for university and national laboratories, and corporate R&D departments globally.

Indium Phosphide (InP) is a binary semiconductor of indium and phosphorus, with a face-centered cubic  crystal structure-same as GaAs and most III-V semiconductors. Synthesizable via white phosphorus-indium iodide reaction at 400°C, high-temperature/pressure element combination, or trialkylindium-phosphine thermal decomposition, it excels in high-power/high-frequency electronics (superior electron velocity vs. Si/GaAs), enabling 604GHz pseudomorphic heterojunction bipolar transistors. With a direct bandgap for optoelectronics like laser diodes, it’s key for photonic ICs in optical communication (WDM) and serves as a substrate for InGaAs-based optoelectronics. Available in 2  3  4.

SKU: AFMSKRZC630
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Description

Property Value
Material Fe-doped InP
Diameter 50mm±0.25mm
Type Semi-insulating
Carrier Concentration (0.6-5)×1016 cm-3
Resistivity >1×107 Ω·cm
Dislocation Density <3×104 cm-2
Orientation (100)
Thickness 350±25μm
Surface Single/Double side polished

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To request raw batch performance data, submit formal vendor registration paperwork, or execute a fast-turnaround R&D manufacturing loop, contact us at inquiry@atomfair.com.

Item is dispatched under the Atomfair Shipping & Delivery Framework (Free worldwide shipping on orders over $59 USD). Return is governed by the Atomfair Return & Refund Policy (7-day technical return window).

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