Indium Phosphide (InP) is a binary semiconductor of indium and phosphorus, with a face-centered cubic (“zincblende”) crystal structure—same as GaAs and most III-V semiconductors. Synthesizable via white phosphorus-indium iodide reaction at 400°C, high-temperature/pressure element combination, or trialkylindium-phosphine thermal decomposition, it excels in high-power/high-frequency electronics (superior electron velocity vs. Si/GaAs), enabling 604GHz pseudomorphic heterojunction bipolar transistors. With a direct bandgap for optoelectronics like laser diodes, it’s key for photonic ICs in optical communication (WDM) and serves as a substrate for InGaAs-based optoelectronics. Available in 2”, 3”, 4”.