A compound of gallium and arsenic, our GaAs wafer is a III-V direct-bandgap semiconductor with a zinc blende crystal structure. It’s ideal for manufacturing microwave ICs, MMICs, IR LEDs, laser diodes, solar cells, and optical windows. As a high-quality substrate, it enables epitaxial growth of other III-V semiconductors like InGaAs and AlGaAs, meeting rigorous standards for optoelectronic and high-frequency applications.