Description
| Properties | Specification |
|---|---|
| Diameter | 2″ |
| Thickness | 500 μm |
| Type | P |
| Doping | Boron |
| Orientation | <221> |
| Resistivity | 1–40 Ω·cm |
| Surface | Single / Double‑side polished |
| Reference Edge | Yes |
Atomfair special crystal orientation silicon wafer 2″ 500μm Type P Boron-doped <221>, Resistivity 1–40 Ω·cm, Surface Finish SSP/DSP
Our special crystal orientation silicon wafers feature customized orientations (<221>, <100> with 4°/7° offsets) for tailored electrical/mechanical properties. With stable boron doping (1–40 Ω·cm resistivity), 500μm thickness, 2″/4″ diameters, and optional S/D polishing, they ensure precision for high-frequency devices, sensors, and power semiconductors.
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