Compound Semiconductor Substrates
Showing 65–80 of 150 results
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Atomfair 4″ Undoped InAs Single Crystal Wafer Undoped InAs100mm±0.25mm N-type 5×1016 cm-3≥2×104 cm²N-s<5x104 cm-2(100) 600±25μm SSP/DSP
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Atomfair 4″ Zn-doped GaAs Single Crystal Wafer
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Atomfair 4″ Zn-doped GaSb Single Crystal Wafer Zn-doped GaSb 100±0.3mm 800±25μm P-type (5-100)x107 cm-3 200-500 cm²/·s <2x103 cm-2 (100) SSP/DSP
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Atomfair 4″ Zn-doped InAs Single Crystal Wafer Zn-doped InAs100mm±0.25mm P-type (1-10)x1017 cm-3100-400 cm²/V-S3x10cm2(100) 600±25μm SSP/DSP
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Atomfair 4H P-Type Silicon Carbide Substrate
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Atomfair 5*5mm Silicon Carbide (SiC) Substrate
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Atomfair 6 inch diameter Silicon Carbide (SiC) Substrate
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Atomfair 6-inch GaN Epitaxial Wafer GaN Epitaxial Wafer 6 inch Customized C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G