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Compound Semiconductor Wafers & Substrates
Showing 65–80 of 91 results
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Atomfair 4″ Zn-doped GaAs Single Crystal Wafer
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Atomfair 4″ Zn-doped GaSb Single Crystal Wafer Zn-doped GaSb 100ยฑ0.3mm 800ยฑ25ฮผm P-type (5-100)x107 cm-3 200-500 cmยฒ/ยทs <2x103 cm-2 (100) SSP/DSP
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Atomfair 4″ Zn-doped InAs Single Crystal Wafer Zn-doped InAs100mmยฑ0.25mm P-type (1-10)x1017 cm-3100-400 cmยฒ/V-S3x10cm2(100) 600ยฑ25ฮผm SSP/DSP
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Atomfair 4H P-Type Silicon Carbide Substrate
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Atomfair 5*5mm Silicon Carbide (SiC) Substrate
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Atomfair 6 inch diameter Silicon Carbide (SiC) Substrate
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Atomfair 6-inch GaN Epitaxial Wafer GaN Epitaxial Wafer 6 inch Customized C-axis(0001)ยฑ0.5ยฐ TTV โค15ฮผm BOWโค20ฮผm
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1ร10 9/cm2
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1ร10 9/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5ร10 8/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5ร10 8/cm2
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150ยฑ0.3mm (100)ยฑ0.5* or (111)ยฑ0.5ยฐ Customizable 500 or 5000 cm-2 Thickness 175ยฑ25ฮผm or 500ยฑ25ฮผm TTV โค10ฮผm Warp โค15ฮผm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150ยฑ0.3mm (100)ยฑ0.5ยฐ or (111)ยฑ0.5ยฐ Customizable 500 or 5000 cm-2 Thickness 175ยฑ25ฮผm or 500ยฑ25ฮผm TTV โค10ฮผm Warp โค15ฮผm Surface E/E, P/E, P/G
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers โ AlGaAs/GaAs Epitaxial Materials