Compound Semiconductor Wafers & Substrates
Showing 1–16 of 91 results
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Atomfair 10*10mm Silicon Carbide (SiC) Substrate
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Atomfair 2 inch diameter Silicon Carbide (SiC) Substrate
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Atomfair 2-inch GaN Single Crystal Wafer (N-type) GaN-FS 2 inch≤2cm-2 400±50 μm C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
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Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 2-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 2 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 2-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 2 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 2-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 2 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 2-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 2 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 2″ Fe-doped InP Single Crystal Wafer Fe-doped InP 50mm±0.25mm Semi-insulating (0.6-5)x1016 cm-3 >1×107Ωcm <3x104cm-2 (100) 350±25μm SSP/DSP
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Atomfair 2″ Ge-doped InSb Single Crystal Wafer Ge-doped InSb50.8±0.3mm500±25μm P-type 1-4×1016 cm-3<2x102 cm-2 0.17 eV 78,000 cm2/V·s
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Atomfair 2″ N-type As-doped Ge Single Crystal Wafer As N-type 50.8±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 2″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 50.8±0.3mm (100)±0.5°or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 2″ S-doped InP Single Crystal Wafer S-doped InP50mm±0.25mm N-type (0.8-3)x1018 cm-31000-1600 cm²/V·s 2.0-2.4×103Ωcm6x10 cm-2(100) 350±25μm SSP/DSP
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Atomfair 2″ Si/Te-doped GaAs Single Crystal Wafer
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Atomfair 2″ Sn-doped InAs Single Crystal Wafer Sn-doped InAs50mm±0.25mm N-type (5-20)x101cm-37000-20000 cm2/-s<5x10cm-2(100) 500±25μm SSP/DSP