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Atomfair 10*10mm Silicon Carbide (SiC) Substrate
A square 10*10mm SiC substrate available in industrial, research, and dummy grades. Suitable for high-performance optoelectronic and power device applications. Offers excellent thermal and electrical properties.
Description
A square 10*10mm SiC substrate available in industrial, research, and dummy grades. Suitable for high-performance optoelectronic and power device applications. Offers excellent thermal and electrical properties.
Parameter | Industrial Grade (P Grade) | Research Grade (R Grade) | Dummy Grade (D Grade) |
---|---|---|---|
Dimensions | 10*10mmยฑ0.2mm | 10*10mmยฑ0.2mm | 10*10mmยฑ0.2mm |
Thickness | 350umยฑ25 um | 350umยฑ25 um | 350umยฑ25 um |
Wafer Orientation | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) | Off axis: 2.0ยฐ-4.0ยฐ toward [1120] ยฑ0.5ยฐ (4H/6H-P), On axis:(111)ยฑ0.5ยฐ (3C-N) |
Micropipe Density | 0cmยฒ | 0cmยฒ | 0cmยฒ |
Resistivity (4H/6H-P) | โค0.10ฮฉยทcm | โค0.10ฮฉยทcm | โค0.10ฮฉยทcm |
Resistivity (3C-N) | โค0.8mฮฉยทcm | โค0.8mฮฉยทcm | โค0.8mฮฉยทcm |
Primary Flat Orientation (4H/6H-P) | {10-10}ยฑ5.0ยฐ | {10-10}ยฑ5.0ยฐ | {10-10}ยฑ5.0ยฐ |
Primary Flat Orientation (3C-N) | {1-10}ยฑ5.0ยฐ | {1-10}ยฑ5.0ยฐ | {1-10}ยฑ5.0ยฐ |
Primary Flat Length | 15.9mmยฑ1.7mm | 15.9mmยฑ1.7mm | 15.9mmยฑ1.7mm |
Secondary Flat Length | 8.0mmยฑ1.7mm | 8.0mmยฑ1.7mm | 8.0mmยฑ1.7mm |
Secondary Flat Orientation | 90ยฐ CW from Prime flat ยฑ5.0ยฐ | 90ยฐ CW from Prime flat ยฑ5.0ยฐ | 90ยฐ CW from Prime flat ยฑ5.0ยฐ |
Edge Exclusion | 3mm | 3mm | 3mm |
TTV/Bow/Warp | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm | โค2.5ฮผm/โค5ฮผm/โค15ฮผm/โค30ฮผm |
Surface Roughness (Polish) | Raโค1 nm | Raโค1 nm | Raโค1 nm |
Surface Roughness (CMP) | Raโค0.2 nm | Raโค0.2 nm | Raโค0.2 nm |
Edge Cracks | None | 1 allowed, โค1 mm | None |
Hex Plates | โค1% cumulative area | โค3% cumulative area | โค3% cumulative area |
Polytype Areas | None | โค2% cumulative area | โค5% cumulative area |
Si Surface Scratches | โค3 scratches, โค1รwafer diameter cumulative length | โค5 scratches, โค1รwafer diameter cumulative length | โค8 scratches, โค1รwafer diameter cumulative length |
Edge Chips | None | โค3 allowed, โค0.5 mm each | โค5 allowed, โค1 mm each |
Si Surface Contamination | None | None | None |
Packaging | Multi-wafer Cassette or Single Wafer Container | Multi-wafer Cassette or Single Wafer Container | Multi-wafer Cassette or Single Wafer Container |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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