Your cart is currently empty!
Atomfair 2″ Ge-doped InSb Single Crystal Wafer Ge-doped InSb50.8±0.3mm500±25μm P-type 1-4×1016 cm-3<2x102 cm-2 0.17 eV 78,000 cm2/V·s
Indium Antimonide (InSb) is a crystalline compound of indium (In) and antimony (Sb), boasting stable physicochemical properties and excellent process compatibility. As a III-V narrow-bandgap semiconductor, it’s ideal for infrared detectors—used in thermal imagers, FLIR systems, infrared-guided missile systems, and infrared astronomy—with sensitivity to 1-5μm wavelengths. It was widely applied in legacy single-detector mechanical scanning thermal imaging systems and also serves as a terahertz radiation source (a strong photo-Dember emitter). Available in 2”, 3”, 8” sizes.
Description
| Property | Value |
|---|---|
| Material | Ge-doped InSb |
| Diameter | 50.8±0.3mm |
| Thickness | 500±25μm |
| Conductivity Type | P-type |
| Carrier Concentration | 1-4×1016 cm-3 |
| Dislocation Density | <2×102 cm-2 |
| Bandgap (300K) | 0.17 eV |
| Electron Mobility (RT) | 78,000 cm2/V·s |
Related products
-
Atomfair 10*10mm Silicon Carbide (SiC) Substrate
-
Atomfair 2 inch diameter Silicon Carbide (SiC) Substrate
-
Atomfair 2-inch GaN Single Crystal Wafer (N-type) GaN-FS 2 inch≤2cm-2 400±50 μm C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
-
Atomfair 2-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 2 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low