Description
| Properties | Specification |
|---|---|
| Diameter | 4″ |
| Thickness | 500 μm |
| Type | P |
| Doping | Boron |
| Orientation | 7° off <100> |
| Resistivity | 1–40 Ω·cm |
| Surface | Single / Double‑side polished |
| Reference Edge | Yes |
Atomfair special crystal orientation silicon wafer, 4″, 500μm, Type P boron-doped, <100> with 4° offset, resistivity 1–40 Ω·cm, surface finish SSP/DSP
Our special crystal orientation silicon wafers feature customized orientations (<221>, <100> with 4°/7° offsets) for tailored electrical and mechanical properties. With stable boron doping (1–40 Ω·cm resistivity), 500μm thickness, 2″ / 8″ diameters, and optional single- or double-sided polishing, they ensure high precision for high-frequency devices, sensors, and power semiconductors.
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