Quantum computing and next-generation electronics

Preparing for 2032 processor nodes with photonic interconnects

photonic computing semiconductor roadmap energy-efficient processors Moore's Law

Using magnetic skyrmion-based interconnects for ultra-low-power computing architectures

skyrmions spintronics nanoelectronics energy-efficient computing magnetic materials

Femtosecond pulse interactions with 2D materials for ultrafast optoelectronic applications

femtosecond pulses 2D materials optoelectronics ultrafast physics graphene

Femtosecond laser pulse interactions with exotic quantum materials

femtosecond lasers quantum materials ultrafast spectroscopy topological insulators light-matter interaction

Employing germanium-silicon strain engineering for next-generation photonic devices

germanium-silicon strain engineering photonics optoelectronics semiconductor devices

Repurposing existing manufacturing infrastructure for scalable carbon nanotube via production

carbon nanotubes manufacturing infrastructure semiconductor fabrication interconnects scalable production

Atomic layer etching for defect-free 2nm semiconductor nodes with self-limiting reactions

atomic layer etching 2nm nodes semiconductor fabrication self-limiting reactions Moore's Law

Enhancing quantum tunneling efficiency in transition metal dichalcogenide channels via strain engineering

transition metal dichalcogenides strain engineering quantum tunneling 2D materials nanoelectronics

Using atomic layer etching for 2nm nodes in III-V semiconductor fabrication

semiconductor processing atomic layer etching III-V materials transistor scaling nanofabrication

Controlling magnetic skyrmion-based interconnects for low-power spintronic memory devices

magnetic skyrmions spintronics memory devices interconnects low-power computing

Using gate-all-around nanosheet transistors for ultra-low-power computing in edge devices

nanosheet transistors edge computing low-power design semiconductor technology IoT

Employing germanium-silicon strain engineering to enhance hole mobility in advanced CMOS nodes

strain engineering germanium-silicon CMOS hole mobility semiconductor materials