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Showing 3761–3776 of 9888 results
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Atomfair 6 inch diameter Silicon Carbide (SiC) Substrate
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Atomfair 6-inch GaN Epitaxial Wafer GaN Epitaxial Wafer 6 inch Customized C-axis(0001)±0.5° TTV ≤15μm BOW≤20μm
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Sapphire HEMT Epitaxial Wafer Sapphire 6 inch Uniformity Excellent Breakdown Voltage High Buffer Leakage Very Low
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 6-inch GaN-on-Si HEMT Epitaxial Wafer Silicon (Si) 6 inch Lattice Mismatch 16.90% Thermal Expansion Difference 56% 1×10 9/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 6-inch GaN-on-SiC HEMT Epitaxial Wafer Silicon Carbide (SiC) 6 inch Lattice Mismatch 3.50% Thermal Expansion Difference 25% 5×10 8/cm2
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Atomfair 6-Roll Double-Sided Film Forming Composite Equipment
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 60 pcs of Al-Clad Stainless Steel 304SS CR2032 Coin Cell Cases for High Voltage Battery Research
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – AlGaAs/GaAs Epitaxial Materials
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – InGaAlP/GaAs Epitaxial System
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Atomfair 635nm~2005nm GaAs Laser Epitaxial Wafers – IGaInAs/GaAs Material System
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Atomfair 635nm~2006nm GaAs Laser Epitaxial Wafers – Quantum Well Epitaxy