Your cart is currently empty!

Atomfair ultra-thin thickness silicon wafer 6″ 150um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
Ultra-thin silicon wafers are monocrystalline wafers made via precision thinning (grinding, polishing, etching) with significantly reduced thickness (typically tens to several microns, application-dependent). Featuring thinness, low power consumption and high integration adaptability, they fit miniaturization needs, ideal for flexible electronics, advanced packaging, MEMS, thin solar cells and high-frequency RF chips.
Description
Properties | Specification |
---|---|
Diameter | 6″ |
Thickness | 150um |
Type | P |
Doping | Boron |
Orientation | <100> |
Resistivity | 1-40 ohm-cm |
Surface | Single/Double-side polished |
Reference Edge | Yes |
Related products
-
Atomfair Czochralski (CZ) method standard thickness silicon wafer 12″ 775um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish DSP
-
Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
-
Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
-
Atomfair Czochralski (CZ) method standard thickness silicon wafer 3″ 380um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
-
Atomfair Czochralski (CZ) method standard thickness silicon wafer 3″ 380um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP