Atomfair ultra-thin thickness silicon wafer 2″ 50um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP

Ultra-thin silicon wafers are monocrystalline wafers made via precision thinning (grinding, polishing, etching) with significantly reduced thickness (typically tens to several microns, application-dependent). Featuring thinness, low power consumption and high integration adaptability, they fit miniaturization needs, ideal for flexible electronics, advanced packaging, MEMS, thin solar cells and high-frequency RF chips.

Description

Properties Specification
Diameter 2″
Thickness 50um
Type P
Doping Boron
Orientation <100>
Resistivity 1-40 ohm-cm
Surface Single/Double-side polished
Reference Edge Yes