Description
| Properties | Specification |
|---|---|
| Diameter | 1″ |
| Thickness | 50um |
| Type | P |
| Doping | Boron |
| Orientation | <100> |
| Resistivity | 1-40 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | No |

Ultra-thin silicon wafers are monocrystalline wafers made via precision thinning (grinding, polishing, etching) with significantly reduced thickness (typically tens to several microns, application-dependent). Featuring thinness, low power consumption and high integration adaptability, they fit miniaturization needs, ideal for flexible electronics, advanced packaging, MEMS, thin solar cells and high-frequency RF chips.
| Properties | Specification |
|---|---|
| Diameter | 1″ |
| Thickness | 50um |
| Type | P |
| Doping | Boron |
| Orientation | <100> |
| Resistivity | 1-40 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | No |