Description
| Properties | Specification |
|---|---|
| Diameter | 4″ |
| Thickness | 500um |
| Type | P |
| Doping | Boron |
| Orientation | 4?? off <100> |
| Resistivity | 1-40 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | Yes |

Our special crystal orientation silicon wafers feature customized orientations (, with 4??/7?? offsets) for tailored electrical/mechanical properties. With stable boron doping (1-40?Ω{cm), 500um thickness, 2″/7″ diameters, and optional S/D polishing, they ensure precision for high-frequency devices, sensors, and power semiconductors.
| Properties | Specification |
|---|---|
| Diameter | 4″ |
| Thickness | 500um |
| Type | P |
| Doping | Boron |
| Orientation | 4?? off <100> |
| Resistivity | 1-40 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | Yes |