Atomfair Float zone (FZ) method standard thickness silicon wafer 3″ 380um Doping None <100> Resistivity >3000 ohm-cm Surface Finish SSP/DSP

FZ standard-thickness silicon wafers are monocrystalline silicon wafers made via the floating zone crystal growth technique. It uses a moving molten zone (not full melting) for polysilicon purification and crystallization, delivering high-purity wafers with ultra-low oxygen and carbon. Ideal for power semiconductors (IGBTs, thyristors), RF devices, detector chips, and high-end R&D.

Description

Properties Specification
Diameter 3″
Thickness 380um
Type FZ
Doping None
Orientation <100>
Resistivity >3000 ohm-cm
Surface Single/Double-side polished
Reference Edge Yes