Description
| Properties | Specification |
|---|---|
| Diameter | 2″ |
| Thickness | 500um |
| Type | FZ |
| Doping | None |
| Orientation | <100> |
| Resistivity | >3000 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | Yes |

FZ standard-thickness silicon wafers are monocrystalline silicon wafers made via the floating zone crystal growth technique. It uses a moving molten zone (not full melting) for polysilicon purification and crystallization, delivering high-purity wafers with ultra-low oxygen and carbon. Ideal for power semiconductors (IGBTs, thyristors), RF devices, detector chips, and high-end R&D.
| Properties | Specification |
|---|---|
| Diameter | 2″ |
| Thickness | 500um |
| Type | FZ |
| Doping | None |
| Orientation | <100> |
| Resistivity | >3000 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | Yes |