Description
| Properties | Specification |
|---|---|
| Diameter | 2″ |
| Thickness | 280um |
| Type | P |
| Doping | Boron |
| Orientation | <100> |
| Resistivity | 1-40 ohm-cm |
| Surface | Single/Double-side polished |
| Reference Edge | Yes |
Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type P Boron <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP
Czochralski (CZ) standard-thickness silicon wafers, produced via the Czochralski crystal growth method, are high-quality monocrystalline silicon substrates. Widely used in semiconductor and photovoltaic industries, they offer reliable performance for integrated circuits and solar cell manufacturing.
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