Atomfair Czochralski (CZ) method standard thickness silicon wafer 2″ 280um Type N Phosphorus <100> Resistivity 1-40 ohm-cm Surface Finish SSP/DSP

Czochralski (CZ) standard-thickness silicon wafers, produced via the Czochralski crystal growth method, are high-quality monocrystalline silicon substrates. Widely used in semiconductor and photovoltaic industries, they offer reliable performance for integrated circuits and solar cell manufacturing.

Description

Properties Specification
Diameter 2″
Thickness 280um
Type N
Doping Phosphorus
Orientation <100>
Resistivity 1-40 ohm-cm
Surface Single/Double-side polished
Reference Edge Yes