Description
High-purity zinc oxide substrates for GaN epitaxial growth with 2.2% lattice mismatch at <0001> orientation. Available in standard size of 20??20??0.5mm with hexagonal crystal structure.
| Property | Value |
|---|---|
| Structure | Hexahedron a=3.325A c=5.213A |
| Density | 5.605 |
| Thermal expansivity | 2.90 |
| Lattice mismatch rate with GaN | 2.2% at <0001> orientation |
| Standard size | 20??20??0.5mm |
| Growth method | Hydrothermal |
| Transmission wavelength | 0.4-0.6??m |
| Refractive index | no=1.922(e)=1.936 |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
