Description
This high-purity Titanium Silicon (TiSi) alloy sputtering target is manufactured via powder metallurgy, ensuring excellent conductivity and uniformity. Ideal for thin film deposition in semiconductor and optical applications, it comes bonded to a copper backing plate for enhanced thermal management.
| Property | Specification |
|---|---|
| Material | Titanium Silicon Alloy (Ti/Si = 75/25 at%) |
| Purity | 99.5% |
| Dimensions | φ74 mm × 4 mm (target) bonded to φ80 mm × 3 mm copper backing plate |
| Manufacturing Process | Powder Metallurgy |
| Conductivity | Conductive |
| Packaging | 1 piece per unit (packed individually) |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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