Atomfair High-Purity Silicon Tellurium Alloy Sputtering Target (Si/Te=1/1 at%, 4N, 60mm Diameter)

This Silicon Tellurium (SiTe) alloy sputtering target offers a high-purity (99.99% or 4N) composition with a precise 1:1 atomic ratio of Si to Te. Ideal for thin film deposition in research and industrial applications, it is available in standard or copper-backed configurations for enhanced thermal conductivity.

Description

This Silicon Tellurium (SiTe) alloy sputtering target offers a high-purity (99.99% or 4N) composition with a precise 1:1 atomic ratio of Si to Te. Ideal for thin film deposition in research and industrial applications, it is available in standard or copper-backed configurations for enhanced thermal conductivity.

Product Type Specification Packing Pack Size
Silicon Tellurium Alloy Target Si/Te=1/1 at%, 99.99% purity, ฯ†60ร—3mm Piece 1
Silicon Tellurium Alloy Target (Copper-Backed) Si/Te=1/1 at%, 99.99% purity, ฯ†60ร—3mm bonded to 2mm copper backing plate Piece 1

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.

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