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Atomfair High Purity Gallium Arsenide (GaAs) Sputtering Target – 99.9% (3N) with Copper Backing Plate
This high-purity Gallium Arsenide (GaAs) sputtering target offers 99.9% (3N) purity, ideal for thin film deposition applications. The target comes bonded to a copper backing plate for enhanced thermal conductivity and durability during sputtering processes.
Description
This high-purity Gallium Arsenide (GaAs) sputtering target offers 99.9% (3N) purity, ideal for thin film deposition applications. The target comes bonded to a copper backing plate for enhanced thermal conductivity and durability during sputtering processes.
| Material | Purity | Dimensions | Backing Plate | Packaging | Pack Size |
|---|---|---|---|---|---|
| Gallium Arsenide (GaAs) | 99.9% (3N) | ฯ48ร3mm | Bonded to ฯ50.8ร1mm copper plate | Per piece | 1 |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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