Atomfair High Purity 4N Ge2Sb2Te5 (GST225) Sputtering Target for Phase Change Memory Applications

This high-purity 4N (99.99%) Ge2Sb2Te5 (GST225) sputtering target is designed for phase-change memory and optical storage applications. Available in various diameters and configurations, including bonded copper backing options for enhanced thermal management.

Description

This high-purity 4N (99.99%) Ge2Sb2Te5 (GST225) sputtering target is designed for phase-change memory and optical storage applications. Available in various diameters and configurations, including bonded copper backing options for enhanced thermal management.

Product Variant Specification Packaging
GeSbTe Alloy Target (GST225) 99.99% purity, φ60×6mm 1 piece per pack
Ge2Sb2Te5 Alloy Target 99.99% purity, φ76.2×3mm bonded to 1mm copper backing 1 piece per pack
Ge2Sb2Te5 Alloy Target 99.99% purity, φ60×2mm bonded to 1mm copper backing 1 piece per pack
Ge2Sb2Te5 Alloy Target 99.99% purity, φ60×3mm bonded to 2mm copper backing 1 piece per pack

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.

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