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Atomfair High Purity 4N Ge2Sb2Te5 (GST225) Sputtering Target for Phase Change Memory Applications
This high-purity 4N (99.99%) Ge2Sb2Te5 (GST225) sputtering target is designed for phase-change memory and optical storage applications. Available in various diameters and configurations, including bonded copper backing options for enhanced thermal management.
Description
This high-purity 4N (99.99%) Ge2Sb2Te5 (GST225) sputtering target is designed for phase-change memory and optical storage applications. Available in various diameters and configurations, including bonded copper backing options for enhanced thermal management.
| Product Variant | Specification | Packaging |
|---|---|---|
| GeSbTe Alloy Target (GST225) | 99.99% purity, ฯ60ร6mm | 1 piece per pack |
| Ge2Sb2Te5 Alloy Target | 99.99% purity, ฯ76.2ร3mm bonded to 1mm copper backing | 1 piece per pack |
| Ge2Sb2Te5 Alloy Target | 99.99% purity, ฯ60ร2mm bonded to 1mm copper backing | 1 piece per pack |
| Ge2Sb2Te5 Alloy Target | 99.99% purity, ฯ60ร3mm bonded to 2mm copper backing | 1 piece per pack |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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