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Atomfair High Purity 4N Gadolinium Gallium Oxide (Gd3Ga5O12) Sputtering Target

This gadolinium gallium oxide (Gd3Ga5O12) sputtering target is manufactured by sintering high-purity gadolinium oxide (Gd2O3) and gallium oxide (Ga2O3) powders at a 3:5 atomic ratio. With 99.99% purity (4N), it is ideal for thin film deposition in research and industrial applications. Available in standard diameters with optional copper backing for enhanced thermal conductivity.

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Description

This gadolinium gallium oxide (Gd3Ga5O12) sputtering target is manufactured by sintering high-purity gadolinium oxide (Gd2O3) and gallium oxide (Ga2O3) powders at a 3:5 atomic ratio. With 99.99% purity (4N), it is ideal for thin film deposition in research and industrial applications. Available in standard diameters with optional copper backing for enhanced thermal conductivity.

Configuration Dimensions (Diameter ร— Thickness) Backing Plate Packing
Gd3Ga5O12 target ฯ†50.8 ร— 3mm None 1 pc per unit
Gd3Ga5O12 target ฯ†50.8 ร— 3mm 2mm copper 1 pc per unit
Gd3Ga5O12 target ฯ†50.8 ร— 4mm None 1 pc per unit
Gd3Ga5O12 target ฯ†50.8 ร— 4mm 2mm copper 1 pc per unit
Gd3Ga5O12 target ฯ†50.8 ร— 5mm None 1 pc per unit
Gd3Ga5O12 target ฯ†50.8 ร— 5mm 2mm copper 1 pc per unit

All targets are fabricated from 99.99% pure Gd2O3 and Ga2O3 powders with precise 3:5 atomic ratio composition through sintering process.

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.

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