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Atomfair High-Purity 4N Bismuth Telluride (BiTe) Alloy Sputtering Target (Bi/Te=1/1 at%)
High-purity 4N (99.99%) Bismuth Telluride (BiTe) alloy sputtering target with 1:1 atomic ratio. Available in standard and copper-backed configurations for thin film deposition applications. Ideal for thermoelectric and semiconductor research.
Description
High-purity 4N (99.99%) Bismuth Telluride (BiTe) alloy sputtering target with 1:1 atomic ratio. Available in standard and copper-backed configurations for thin film deposition applications. Ideal for thermoelectric and semiconductor research.
Configuration | Dimensions | Purity | Packaging |
---|---|---|---|
Standard BiTe Target | ฯ60ร3mm | 99.99% (4N) | 1 piece per unit |
Copper-Backed BiTe Target | ฯ60ร3mm (BiTe) + 2mm Cu backing (total thickness โค5mm) | 99.99% (4N) | 1 piece per unit |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
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