Atomfair High-Purity 4H/6H-SiC Single Crystal Wafer Substrate (N-Type Conductive, Polished Si/C Face)

Description

Premium-quality 4H-SiC and 6H-SiC single crystal wafer substrates with N-type conductivity, available in both Si-face and C-face polished options. These wafers feature precise orientation accuracy (±0.5°) and are ideal for advanced semiconductor applications. Offered in standard dimensions with small off-axis cuts for specialized research and production needs.

Polytype	Orientation	Dimensions (mm)	Off-Axis Cut	Surface Finish	Orientation Accuracy	Packaging	Qty per Pack
4H-SiC	(0001) Si-face	13×3×0.33	Small off-cut (O-cut)	Polished Si-face	±0.5°	Per piece	10
4H-SiC	(000-1) C-face	13×3×0.33	Small off-cut (O-cut)	Polished C-face	±0.5°	Per piece	10
6H-SiC	(000-1) C-face	13×3×0.33	Small off-cut (O-cut)	Polished C-face	±0.5°	Per piece	10
4H-SiC	<0001> 4° off	13×3×0.35	4° off-axis	Single side polished	–	Per piece	10

If you are interested or have any questions, please contact us at inquiry@atomfair.com

Disclaimer: Sold exclusively for laboratory research.