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Atomfair Germanium (Ge) Semiconductor Substrate
High-quality germanium semiconductor substrate with intrinsic, N-type, and P-type doping options. Ideal for infrared optics and high-speed electronic devices. Available in standard wafer sizes with precise thickness control.
Description
High-quality germanium semiconductor substrate with intrinsic, N-type, and P-type doping options. Ideal for infrared optics and high-speed electronic devices. Available in standard wafer sizes with precise thickness control.
| Property | Value |
|---|---|
| Structure | Cube a=5.6575 |
| Conduction Types | Intrinsic/N/P |
| Doping | Non (Intrinsic), Sb (N-type), Ga (P-type) |
| Resistivity | >35 ????cm (Intrinsic), 0.05~35 ????cm (Doped) |
| Growth Method | CZ |
| Standard Substrate Sizes | fai2″??0.5mm, fai3″??0.5mm, 4″??0.5mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
