Description
Undoped and doped GaP substrates for optoelectronic applications. Features excellent thermal and electrical properties for LED and photonic devices. Available in standard wafer sizes with low dislocation density.
| Property | Value |
|---|---|
| Doping | Undoped, S, N |
| Conduction Types | N, NN |
| Carrier Concentration | 2-8??10?? cm??, 2-6??10?? cm?? |
| Dislocation Density | <10? cm?? |
| Growth Method | LEC |
| Standard Substrate Size | fai2″??0.25mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
