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Atomfair Gallium Phosphide (GaP) Semiconductor Substrate
Undoped and doped GaP substrates for optoelectronic applications. Features excellent thermal and electrical properties for LED and photonic devices. Available in standard wafer sizes with low dislocation density.
Description
Undoped and doped GaP substrates for optoelectronic applications. Features excellent thermal and electrical properties for LED and photonic devices. Available in standard wafer sizes with low dislocation density.
| Property | Value |
|---|---|
| Doping | Undoped, S, N |
| Conduction Types | N, NN |
| Carrier Concentration | 2-8??10?? cm??, 2-6??10?? cm?? |
| Dislocation Density | <10? cm?? |
| Growth Method | LEC |
| Standard Substrate Size | fai2″??0.25mm |
If you are interested or have any questions, please contact us at inquiry@atomfair.com
Disclaimer: Sold exclusively for laboratory research.
