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Showing 6177–6192 of 11373 results
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Atomfair 6,6′-Dibromo-1,1′-bis(5-decylpentadecyl)-[3,3′-biindolinylidene]-2,2′-dione C66H108Br2N2O2 CAS 1413918-81-6
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Atomfair 6,6′,6”,6”’-(Pyrene-1,3,6,8-tetrayl)tetrakis(2-naphthoic acid) C60H34O8 CAS 2010983-66-9
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Atomfair 6,7-Dihydrocyclopenta[C]pyridin-5-one C8H7NO CAS 350847-80-2
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Atomfair 6,7-Dimethoxyindole C10H11NO2 CAS 31165-13-6
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Atomfair 6,8-Dibromo-3,3-bis(((2-ethylhexyl)oxy)methyl)-3,4-dihydro-2H-thieno[3,4-b][1,4]dioxepine C25H42Br2O4S CAS 700817-08-9
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Atomfair 6,9-Diphenyl-9H-carbazole-3-boronic Acid (contains varying amounts of Anhydride) C24H18BNO2 CAS 1133058-06-6
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Atomfair 6″ N-type As-doped Ge Single Crystal Wafer As N-type 150±0.3mm (100)±0.5* or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 6″ P-type Ga-doped Ge Single Crystal Wafer Ga P-type 150±0.3mm (100)±0.5° or (111)±0.5° Customizable 500 or 5000 cm-2 Thickness 175±25μm or 500±25μm TTV ≤10μm Warp ≤15μm Surface E/E, P/E, P/G
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Atomfair 60 pcs of Al-Clad Stainless Steel 304SS CR2032 Coin Cell Cases for High Voltage Battery Research
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – AlGaAs/GaAs Epitaxial Materials
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Atomfair 635nm~2004nm GaAs Laser Epitaxial Wafers – InGaAlP/GaAs Epitaxial System
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Atomfair 635nm~2005nm GaAs Laser Epitaxial Wafers – IGaInAs/GaAs Material System
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Atomfair 635nm~2006nm GaAs Laser Epitaxial Wafers – Quantum Well Epitaxy
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Atomfair 6H P-Type Silicon Carbide Substrate
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Atomfair 6N High Purity Copper Wire (99.9999%) – 1mm Diameter
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Atomfair 6N High Purity Intrinsic Silicon Sputtering Target (P-Type/N-Type/Undoped)