Atomfair Tris(dimethylamido)gallium (III) C12H36Ga2N6 CAS 57731-40-5

Tris(dimethylamido)gallium (III) (CAS No. 57731-40-5) is a highly specialized organometallic compound with the molecular formula C12H36Ga2N6, also known by its IUPAC name N-[bis(dimethylamino)gallanyl]-N-methylmethanamine . This dimeric gallium complex is a volatile, moisture-sensitive precursor widely used in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of advanced semiconductor materials, including gallium nitride (GaN) and other III-V compounds. Its high purity and thermal stability make it ideal for precise thin-film growth in optoelectronic and microelectronic applications. Packaged under inert gas to ensure stability, this compound is a critical reagent for researchers and manufacturers in nanotechnology, photovoltaics, and…

Description

Tris(dimethylamido)gallium (III) (CAS No. 57731-40-5) is a highly specialized organometallic compound with the molecular formula C12H36Ga2N6, also known by its IUPAC name N-[bis(dimethylamino)gallanyl]-N-methylmethanamine. This dimeric gallium complex is a volatile, moisture-sensitive precursor widely used in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of advanced semiconductor materials, including gallium nitride (GaN) and other III-V compounds. Its high purity and thermal stability make it ideal for precise thin-film growth in optoelectronic and microelectronic applications. Packaged under inert gas to ensure stability, this compound is a critical reagent for researchers and manufacturers in nanotechnology, photovoltaics, and advanced materials science.

Properties

  • CAS Number: 57731-40-5
  • Complexity: 74
  • IUPAC Name: N-[bis(dimethylamino)gallanyl]-N-methyl-methanamine
  • InChI: InChI=1S/6C2H6N.2Ga/c6*1-3-2;;/h6*1-2H3;;/q6*-1;2*+3
  • InChI Key: OHLCFMPFTXQSJZ-UHFFFAOYSA-N
  • Exact Mass: 404.15042
  • Molecular Formula: C12H36Ga2N6
  • Molecular Weight: 403.90
  • SMILES: CN(C)[Ga](N(C)C)N(C)C.CN(C)[Ga](N(C)C)N(C)C
  • Topological: 19.4
  • Monoisotopic Mass: 402.15129
  • Synonyms: 57731-40-5, Tris(dimethylamido)gallium (III), 627-392-1, Tris(dimethylamido)gallium(III), Tris(dimethylamino)gallium(III) dimer, MFCD11973803, tris(dimethylamido) gallium (III), N-[bis(dimethylamino)gallanyl]-N-methylmethanamine

Application

Tris(dimethylamido)gallium (III) is primarily employed as a precursor in the deposition of gallium-containing thin films via CVD and ALD techniques, essential for producing high-performance semiconductors. It is also used in the synthesis of gallium-based nanomaterials for optoelectronic devices such as LEDs and laser diodes. Additionally, this compound serves as a key reagent in organometallic chemistry research, enabling the development of novel catalysts and coordination complexes.

Safety and Hazards

GHS Hazard Statements

  • H228 (90.7%): Flammable solid [Danger Flammable solids]
  • H314 (100%): Causes severe skin burns and eye damage [Danger Skin corrosion/irritation]

Precautionary Statements

  • P210, P240, P241, P260, P264, P280, P301+P330+P331, P302+P361+P354, P304+P340, P305+P354+P338, P316, P321, P363, P370+P378, P405, and P501

Hazard Classes and Categories

  • Flam. Sol. 1 (90.7%)
  • Skin Corr. 1B (100%)

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