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Atomfair Tris(dimethylamido)gallium (III) C12H36Ga2N6

Description Tris(dimethylamido)gallium (III) (CAS No. 57731-40-5) is a highly specialized organometallic compound with the molecular formula C12H36Ga2N6, also known by its IUPAC name N-[bis(dimethylamino)gallanyl]-N-methylmethanamine . This dimeric gallium complex is a volatile, moisture-sensitive precursor widely used in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of advanced semiconductor materials, including gallium nitride (GaN) and other III-V compounds. Its high purity and thermal stability make it ideal for precise thin-film growth in optoelectronic and microelectronic applications. Packaged under inert gas to ensure stability, this compound is a critical reagent for researchers and manufacturers in nanotechnology, photovoltaics,…

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Description

Description

Tris(dimethylamido)gallium (III) (CAS No. 57731-40-5) is a highly specialized organometallic compound with the molecular formula C12H36Ga2N6, also known by its IUPAC name N-[bis(dimethylamino)gallanyl]-N-methylmethanamine. This dimeric gallium complex is a volatile, moisture-sensitive precursor widely used in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of advanced semiconductor materials, including gallium nitride (GaN) and other III-V compounds. Its high purity and thermal stability make it ideal for precise thin-film growth in optoelectronic and microelectronic applications. Packaged under inert gas to ensure stability, this compound is a critical reagent for researchers and manufacturers in nanotechnology, photovoltaics, and advanced materials science.

  • CAS No: 57731-40-5
  • Molecular Formula: C12H36Ga2N6
  • Molecular Weight: 403.90
  • Exact Mass: 404.15042
  • Monoisotopic Mass: 402.15129
  • IUPAC Name: N-[bis(dimethylamino)gallanyl]-N-methylmethanamine
  • SMILES: CN(C)[Ga](N(C)C)N(C)C.CN(C)[Ga](N(C)C)N(C)C
  • Synonyms: 57731-40-5, Tris(dimethylamido)gallium (III), 627-392-1, Tris(dimethylamido)gallium(III), Tris(dimethylamino)gallium(III) dimer

Application

Tris(dimethylamido)gallium (III) is primarily employed as a precursor in the deposition of gallium-containing thin films via CVD and ALD techniques, essential for producing high-performance semiconductors. It is also used in the synthesis of gallium-based nanomaterials for optoelectronic devices such as LEDs and laser diodes. Additionally, this compound serves as a key reagent in organometallic chemistry research, enabling the development of novel catalysts and coordination complexes.

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