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Atomfair Trimethylindium TMI C3H9In

Description Trimethylindium (TMI) ( CAS 3385-78-2 ) is a highly pure, organometallic compound with the molecular formula C3H9In , widely utilized in advanced material synthesis and semiconductor manufacturing. This volatile, pyrophoric liquid serves as a critical precursor in Metal-Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) processes for producing high-performance indium-containing thin films, such as indium phosphide (InP) and indium gallium arsenide (InGaAs). Packaged under inert gas to ensure stability, our ultra-high-purity grade (??99.999%) minimizes oxygen and moisture contamination, enabling precise stoichiometric control for optoelectronic and microelectronic applications. Strict QC protocols guarantee batch-to-batch consistency, with optional custom purity…

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Description

Description

Trimethylindium (TMI) (CAS 3385-78-2) is a highly pure, organometallic compound with the molecular formula C3H9In, widely utilized in advanced material synthesis and semiconductor manufacturing. This volatile, pyrophoric liquid serves as a critical precursor in Metal-Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) processes for producing high-performance indium-containing thin films, such as indium phosphide (InP) and indium gallium arsenide (InGaAs). Packaged under inert gas to ensure stability, our ultra-high-purity grade (??99.999%) minimizes oxygen and moisture contamination, enabling precise stoichiometric control for optoelectronic and microelectronic applications. Strict QC protocols guarantee batch-to-batch consistency, with optional custom purity and packaging configurations available for epitaxial growth systems.

  • CAS No: 3385-78-2
  • Molecular Formula: C3H9In
  • Molecular Weight: 159.92
  • Exact Mass: 159.9743041
  • Monoisotopic Mass: 159.9743041
  • IUPAC Name: trimethylindigane
  • SMILES: C[In](C)C
  • Synonyms: Trimethylindium, 3385-78-2, Indium, trimethyl-, EINECS 222-200-9, DTXSID90187490

Application

Trimethylindium is primarily employed as an indium source in MOCVD growth of III-V semiconductor compounds for LEDs, laser diodes, and high-speed transistors. It enables the fabrication of infrared optoelectronic devices through deposition of InP and InGaAs layers with exceptional crystalline quality. The compound’s volatility and clean decomposition profile make it ideal for low-temperature ALD processes in advanced photovoltaics and quantum dot synthesis.

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