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Atomfair Tetrakis(ethylmethylamido)titanium(IV) C12H32N4Ti

Description Tetrakis(ethylmethylamido)titanium(IV) (CAS: 308103-54-0) is a highly specialized organometallic compound with the molecular formula C12H32N4Ti . This titanium-based precursor is widely utilized in advanced materials science, particularly in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of high-purity titanium nitride (TiN) and titanium oxide (TiO2) thin films. Its volatile nature and excellent thermal stability make it an ideal choice for precision coatings in semiconductor manufacturing, optoelectronics, and nanotechnology applications. The compound is rigorously synthesized and purified to ensure ultra-high purity (>99.9%), minimizing contaminants that could compromise film quality. Proper handling under inert atmospheres (e.g., argon…

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Description

Description

Tetrakis(ethylmethylamido)titanium(IV) (CAS: 308103-54-0) is a highly specialized organometallic compound with the molecular formula C12H32N4Ti. This titanium-based precursor is widely utilized in advanced materials science, particularly in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of high-purity titanium nitride (TiN) and titanium oxide (TiO2) thin films. Its volatile nature and excellent thermal stability make it an ideal choice for precision coatings in semiconductor manufacturing, optoelectronics, and nanotechnology applications. The compound is rigorously synthesized and purified to ensure ultra-high purity (>99.9%), minimizing contaminants that could compromise film quality. Proper handling under inert atmospheres (e.g., argon or nitrogen) is essential due to its sensitivity to moisture and air.

  • CAS No: 308103-54-0
  • Molecular Formula: C12H32N4Ti
  • Molecular Weight: 280.28
  • Exact Mass: 280.2106377
  • Monoisotopic Mass: 280.2106377
  • IUPAC Name: ethyl(methyl)azanide;titanium(4+)
  • SMILES: CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C.[Ti+4]
  • Synonyms: 308103-54-0, Tetrakis(ethylmethylamido)titanium(IV), DTXSID10403326, DTXCID90354180, 628-239-1

Application

Tetrakis(ethylmethylamido)titanium(IV) is primarily employed as a precursor for depositing titanium-containing thin films via ALD/CVD in semiconductor devices, such as gate dielectrics and diffusion barriers. It also finds use in photovoltaic cells and optical coatings due to its ability to form uniform, conformal layers. Researchers leverage its reactivity to develop advanced catalytic systems and nanostructured materials.

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