Description

(tert-Butylimino)tris(diethylamino)tantalum (CAS No. 169896-41-7) is a high-purity organometallic compound with the molecular formula C₁₆H₃₉N₄Ta-3. This advanced precursor is widely utilized in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for the fabrication of tantalum-containing thin films, particularly in semiconductor and nanotechnology applications. The compound features a well-defined coordination environment with tert-butylimido and diethylamido ligands, ensuring excellent thermal stability and controlled reactivity. It is supplied as a moisture-sensitive liquid or solid, requiring handling under inert conditions (e.g., nitrogen or argon atmosphere). Ideal for researchers and engineers in materials science, this precursor enables precise deposition of tantalum nitride (TaN) or tantalum carbonitride (TaCN) films, which are critical for diffusion barriers, gate electrodes, and interconnects in microelectronics.

Properties

• CAS Number: 169896-41-7
• Complexity: 139
• IUPAC Name: tert-butyliminotantalum;diethylazanide
• InChI: InChI=1S/C4H9N.3C4H10N.Ta/c1-4(2,3)5;3*1-3-5-4-2;/h1-3H3;3*3-4H2,1-2H3;/q;3*-1;
• InChI Key: OAUVVCYTHMBYBP-UHFFFAOYSA-N
• Exact Mass: 468.26547
• Molecular Formula: C16H39N4Ta-3
• Molecular Weight: 468.46
• SMILES: CC[N-]CC.CC[N-]CC.CC[N-]CC.CC(C)(C)N=[Ta]
• Topological: 15.4
• Monoisotopic Mass: 468.26547
• Synonyms: 169896-41-7, (tert-Butylimino)tris(diethylamino)tantalum, Tantalum tris(diethylamido)-tert-butylimide, tert-butyliminotantalum;diethylazanide, Tris(diethylamido)(tert-butylimido)tantalum(V), SCHEMBL43362, MFCD02684506, AKOS015913429, DB-009407, tris(diethylamido)(t-butylimido)tantalum(v), Tris(diethylamido)(tert-butylimido)tantalum(V), 99%, >=99.99% trace metals basis, Tris(diethylamido)(tert-butylimido)tantalum(V), packaged for use in deposition systems

Application

This compound serves as a key precursor for depositing high-performance tantalum-based thin films via CVD or ALD techniques. It is particularly valuable in semiconductor manufacturing for creating diffusion barriers in copper interconnects. The tert-butylimido ligand enhances volatility, while the diethylamido groups facilitate clean decomposition, minimizing carbon contamination. Researchers also employ it for exploratory materials synthesis in catalysis and surface modification.

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