Description
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Parameter Category
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Specifications
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Growth Method
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Czochralski Method (CZ)
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Diameter and Tolerance (mm)
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1 inch: 25.4±0.3
2 inches: 50.8±0.3
3 inches: 76.2±0.3
4 inches: 100±0.4
5 inches: 125±0.4
6 inches: 150±0.4
8 inches: 200±0.4
12 inches: 300±0.4
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Type/Dopant
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N-type (doped with Phosphorus, Arsenic, Antimony);
P-type (doped with Boron)
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Crystal Orientation
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Standard: <100>
Optional: <110><111>
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Resistivity (Ω·cm)
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0.001–0.005, 1–10, >5000
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Thickness (μm)
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500–725 μm
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Oxide Layer Thickness (nm)
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20, 50, 90, 100, 200, 285, 300, 500, 800, 1000, 1500, 2000, 3000 nm
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Flatness (TIR)
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<3μm
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Surface Roughness (Ra)
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<0.5 μm
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Bow
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<20 μm
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Total Thickness Variation (TTV)
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<20 μm
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Particle Count (per Wafer)
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0.3<30 μm
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Oxidation & Polishing Type
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①Single-side Polishing + Double-side Oxidation;
②Single-side Polishing + Single-side Oxidation;
③Double-side Polishing + Double-side Oxidation; ④Double-side Polishing + Single-side Oxidation
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If you’re interested, have any questions, or have specific customization requirements, please feel free to contact us at inquiry@atomfair.com.





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