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Atomfair SiC Epitaxial Wafer

The primary epitaxial technology for SiC epitaxial wafer growth is Chemical Vapor Deposition (CVD), which achieves SiC epitaxial materials with specific thickness and doping via step-flow growth in SiC epitaxial reactors. As requirements for SiC power device manufacturing and voltage withstand levels rise, SiC epitaxial wafers continue to develop toward low defects and thicker epitaxy. Our company provides customized thin-film SiC epitaxy on 4H substrates, specifically designed for the development of SiC devices.

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Description

SiC epitaxial wafers use SiC single crystal wafers as substrates. A single crystal layer is typically deposited on the wafer via the Chemical Vapor Deposition (CVD) method to form the epitaxial wafer-specifically, SiC epitaxy is prepared by growing a SiC epitaxial layer on a conductive SiC substrate, which further enables the manufacturing of power devices.
Our company offers 4-inch and 6-inch N-type 4H-SiC epitaxial wafers. These wafers feature large bandgap, high saturated electron drift velocity, high-speed two-dimensional electron gas, and high breakdown field strength. Such properties allow devices to achieve high-temperature resistance, high-voltage resistance, fast switching speed, low on-resistance, small size, and light weight.
SiC epitaxial wafers are mainly used for Schottky Barrier Diodes (SBD), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET), Junction Field-Effect Transistors (JFET), Bipolar Junction Transistors (BJT), Silicon Controlled Rectifiers (SCR), and Insulated Gate Bipolar Transistors (IGBT), covering low-voltage, medium-voltage, and high-voltage fields. Currently, SiC epitaxial wafers for high-voltage applications are in the R&D stage worldwide.

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