Description

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Atomfair PNBE-739 PN Junction Physical Characteristics Tester

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Product Overview

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This experimental equipment utilizes a micro-current source to supply forward current to the PN junction. By adjusting the current magnitude, it obtains the forward voltage drop across the PN junction. Equipped with a temperature control system, it is capable of measuring the volt-ampere characteristic curves of the PN junction under different temperature conditions. Through in-depth research on the relationships between the PN junction’s voltage, current, and temperature, key parameters such as the Boltzmann constant (k), sensitivity (S), and the bandgap width of silicon materials can be derived. It is widely used in physics teaching and optoelectronic comprehensive experiments.

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Main Experimental Contents

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1. At room temperature, map the curve of the PN junction’s forward voltage varying with the forward current to obtain the Boltzmann constant.

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2. Under different temperature conditions, map the curve of the PN junction’s forward voltage changing with the forward current to calculate the Boltzmann constant.

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3. Under the condition of constant forward current, plot the curve of the PN junction’s forward voltage drop versus temperature, and compute the sensitivity of the junction voltage to temperature changes.

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4. Calculate the bandgap width of the semiconductor (silicon) material at 0K.

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Instrument Features

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1. Adopts a digital encoder for precise adjustment, ensuring excellent stability during operation.

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2. Enables easy switching of measurement ranges via buttons, featuring convenient operation and accurate readings.

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3. Utilizes PID regulation for temperature control, achieving rapid and stable temperature adjustment.

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Specification Parameters (International Standard)

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1. Constant Current Source: Current output range of 10nA – 10mA; resolution of 1nA; 3.5-digit digital display.

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2. Voltmeter: Measurement range of 0 – 1.999V; 3.5-digit digital display.

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3. Temperature Control Power Supply: Temperature control range from room temperature to 100鈩±0.1鈩

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4. Temperature Sensor: Pt100.

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5. PN Junction Sample: A PN junction formed by short-circuiting the CB junction of a low-power NPN silicon transistor (2SC1815, S9013).

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Experimental Data Graphs Description

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1. Volt-Ampere Characteristic Curve at Room Temperature: The graph depicts the variation of the PN junction’s forward voltage (ranging from 0.4V to 0.6V) with the forward current (ranging from 10渭A to 90渭A).

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2. U-T Variation Curve: The fitting equation of the curve is y (V) = -0.0024x + 0.615, where the horizontal axis represents temperature (ranging from 20鈩

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Customization Service

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We offer customization of configuration parameters according to different customer requirements to meet diverse experimental needs.

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If you鈥檙e interested, have any questions, or have specific customization requirements, please feel free to contact us at inquiry@atomfair.com.