Description

N,N,N’,N’-Tetraethylsilanediamine (CAS No. 27804-64-4) is a highly specialized organosilicon compound with the molecular formula C₈H₂₀N₂Si. This chemical is a clear, colorless liquid with applications in advanced material synthesis and surface modification. Its unique structure, featuring a silicon center bonded to two diethylamino groups, makes it a valuable precursor in the production of silicon-based polymers, coatings, and thin films. With a purity grade of ≥98%, this reagent is ideal for research in nanotechnology, semiconductor fabrication, and catalysis. Proper handling under inert conditions is recommended due to its sensitivity to moisture and air.

Properties

• CAS Number: 27804-64-4
• Complexity: 70.2
• InChI: InChI=1S/C8H20N2Si/c1-5-9(6-2)11-10(7-3)8-4/h5-8H2,1-4H3
• InChI Key: MVYGKQJKGZHAAI-UHFFFAOYSA-N
• Exact Mass: 172.139575181
• Molecular Formula: C8H20N2Si
• Molecular Weight: 172.34
• SMILES: CCN(CC)[Si]N(CC)CC
• Topological: 6.5
• Monoisotopic Mass: 172.139575181
• Synonyms: 27804-64-4, DTXCID301731112, N,N,N’,N’-Tetraethylsilanediamine, dtxsid401301011, bis(diethylamino)silane, Silanediamine, N,N,N’,N’-tetraethyl-, MFCD19105220, Bis(diethylamino)silane, bdeas, BCP30198, CBA80464, BDEAS: SiH2[N(CH2CH3)2]2, SilanediaMide, N,N,N’,N’-tetraethyl, AS-86568, Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM

Application

N,N,N’,N’-Tetraethylsilanediamine is widely used as a silicon precursor in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes for creating high-performance silicon nitride and silicon oxide thin films. It also serves as a key intermediate in the synthesis of silicon-containing polymers and hybrid materials. Researchers utilize this compound for surface functionalization and as a ligand in coordination chemistry. Its reactivity with metal oxides makes it valuable in catalysis and ceramic material development.

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