Description
Epitaxial Structure Characteristics
The InP/InGaAs HBT epitaxial wafer employs optimized material combinations with:
Emitter: Wide-bandgap InP
Base: Narrow-bandgap InGaAs (fully leveraging its superior electronic properties)
Collector: Matched InP/InGaAs structure
Precise lattice matching and thermal expansion coefficient alignment are maintained throughout the epitaxial stack through advanced growth techniques.
Key Performance Advantages
Ultra-High Frequency Capability:
Electron mobility: 1.6× GaAs, 9× Si
Significant velocity overshoot effect
Typical fT > 300 GHz (structure dependent)
Low-Power Operation:
Reduced turn-on voltage (VBE ≈ 0.7V)
30% lower power dissipation vs. GaAs HBTs
Enhanced Reliability:
High breakdown field (>300 kV/cm)
Low surface recombination velocity (<103 cm/s)
Superior thermal conductivity (0.68 W/cm·K vs. GaAs’s 0.46)
OEIC Integration:
Native compatibility with 1.3μm photodetectors
Enables monolithic optoelectronic ICs
Matches minimum dispersion wavelength in fiber optics
Noise Performance:
1/f noise corner frequency < 1 kHz NFmin < 2 dB @ 10 GHz Target Applications These epitaxial wafers enable next-generation devices for: Millimeter-wave communication systems (E-band/W-band) Low-noise receivers for 5G/6G infrastructure Optical transceivers (100G/400G/800G) High-precision test & measurement equipment Space-grade electronics (radiation-hard)
