Description

Hafnium(IV) n-butoxide (CAS No. 22411-22-9) is a high-purity metal-organic compound with the molecular formula C₁₆H₃₆HfO₄, widely used in advanced materials synthesis and thin-film deposition processes. This alkoxide precursor features a hafnium(4+) center coordinated with four n-butoxide ligands, offering exceptional reactivity and volatility for chemical vapor deposition (CVD) and atomic layer deposition (ALD) applications. Our product is synthesized under stringent conditions to ensure optimal purity (>99.9%) and minimal trace metal contaminants, making it ideal for semiconductor fabrication, dielectric layers, and nanotechnology research. Supplied in moisture-sensitive packaging under inert gas to prevent hydrolysis, this compound is a critical precursor for high-k gate oxides and specialty ceramics. Technical specifications include: molecular weight 458.84 g/mol, density ~1.12 g/cm³, and decomposition temperature >200°C. Available in research quantities through custom bulk synthesis programs with certified CoA and MSDS documentation.

Properties

• CAS Number: 22411-22-9
• Complexity: 13.1
• IUPAC Name: butan-1-olate;hafnium(4+)
• InChI: InChI=1S/4C4H9O.Hf/c4*1-2-3-4-5;/h4*2-4H2,1H3;/q4*-1;+4
• InChI Key: LTBRWBUKPWVGFA-UHFFFAOYSA-N
• Exact Mass: 472.20792
• Molecular Formula: C16H36HfO4
• Molecular Weight: 470.9
• SMILES: CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-].[Hf+4]
• Topological: 92.2
• Monoisotopic Mass: 472.20792
• Synonyms: Hafnium(IV) n-butoxide, 22411-22-9, Hafnium tetrabutoxide, hafnium(IV) butoxide, butan-1-olate;hafnium(4+), SCHEMBL110238, LTBRWBUKPWVGFA-UHFFFAOYSA-N

Application

Hafnium(IV) n-butoxide serves as a key precursor for depositing hafnium oxide (HfO₂) thin films in semiconductor manufacturing, particularly for high-k dielectric layers in sub-45nm CMOS devices. The compound enables precise stoichiometric control in ALD processes for memory capacitors and gate insulators due to its self-limiting surface reactions. Researchers utilize this precursor for developing optical coatings with high refractive indices and for synthesizing hafnium-containing nanocomposites. Its volatility and thermal stability make it suitable for MOCVD applications in specialized ceramic materials.

Safety and Hazards

GHS Hazard Statements

• H317: May cause an allergic skin reaction [Warning Sensitization, Skin]
• H318: Causes serious eye damage [Danger Serious eye damage/eye irritation]

Precautionary Statements

• P261, P264+P265, P272, P280, P302+P352, P305+P354+P338, P317, P321, P333+P317, P362+P364, and P501

Hazard Classes and Categories

• Flam. Liq. 3 (97.4%)
• Skin Sens. 1 (100%)
• Eye Dam. 1 (100%)

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Disclaimer: Sold exclusively for laboratory research. Prohibited for commercial use, diagnostics, or human/animal applications. Buyers assume all compliance liability.