Description

Hafnium, tetrakis(dimethylamino)- (CAS No. 19782-68-4) is a highly specialized organometallic compound with the molecular formula C₈H₂₄HfN₄. This high-purity hafnium precursor is widely utilized in advanced material synthesis and thin-film deposition processes, particularly in semiconductor and nanotechnology applications. As a tetrakis(dimethylamido)hafnium(IV) complex, it exhibits excellent volatility and thermal stability, making it ideal for chemical vapor deposition (CVD) and atomic layer deposition (ALD) of hafnium-containing films. Our product is rigorously synthesized and purified to meet the exacting standards of research and industrial applications, ensuring consistent performance in sensitive processes. Available in secure, moisture-resistant packaging under inert atmosphere to maintain purity and shelf stability.

Properties

• CAS Number: 19782-68-4
• Complexity: 24.1
• IUPAC Name: dimethylazanide;hafnium(4+)
• InChI: InChI=1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
• InChI Key: ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
• Exact Mass: 356.14666
• Molecular Formula: C8H24HfN4
• Molecular Weight: 354.79
• SMILES: C[N-]C.C[N-]C.C[N-]C.C[N-]C.[Hf+4]
• Topological: 4
• Monoisotopic Mass: 356.14666
• Synonyms: Hafnium, tetrakis(dimethylamino)-, 19782-68-4, 19962-11-9, Tetrakis(dimethylamido)hafnium(IV), DTXSID50173490, DTXCID3095981, Hafnium tetrakis(dimethylazanide), 629-069-0, 812-115-0, TETRAKIS(DIMETHYLAMINO)HAFNIUM, dimethylazanide;hafnium(4+), MFCD01862473, TETRAKIS(DIMETHYLAMIDO)HAFNIUM(IV),, TDMAH, SCHEMBL54871, Tetrakis(dimethylamino)hafnium(IV), DB-009832, Tetrakis(dimethylamino)hafnium(IV) 99.999%, H37051, Tetrakis(dimethylamido)hafnium(IV), >=99.99%, Tetrakis(dimethylamido)hafnium(IV), packaged for use in deposition systems

Application

This compound serves as a critical precursor for depositing hafnium-based thin films in microelectronics, particularly for high-k dielectric applications in next-generation semiconductor devices. It enables precise control of film composition and morphology in ALD and CVD processes for advanced logic and memory chips. Researchers also employ it in the development of novel catalytic systems and ceramic materials requiring hafnium incorporation.

Safety and Hazards

GHS Hazard Statements

• H228 (50%): Flammable solid [Danger Flammable solids]
• H261 (100%): In contact with water releases flammable gas [Danger Substances and mixtures which in contact with water, emit flammable gases]
• H314 (100%): Causes severe skin burns and eye damage [Danger Skin corrosion/irritation]

Precautionary Statements

• P210, P231+P232, P240, P241, P260, P264, P280, P301+P330+P331, P302+P361+P354, P304+P340, P305+P354+P338, P316, P321, P363, P370+P378, P402+P404, P405, and P501

Hazard Classes and Categories

• Flam. Sol. 1 (98%)
• Water-react. 2 (98%)
• Skin Corr. 1B (100%)
• Eye Dam. 1 (18%)

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